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Ultra-Low Accelerating Voltage SEM (ULV-SEM)

Newly added EBSP function to Ultra-Low Voltage SEM!

Ultra-low accelerating voltage SEM £ULTRA 55¤ from ZEISS provides a new method for your problem solution and material development by state-of-the-art technology!

  • Features 1 Observation at ultra-low accelerating voltage from 100 V is perfect for electrode surface observation.
  • Features 2 Non-processing (without conductive deposition) observation of all kinds of sample including insulated object is possible.
  • Features 3 High-resolution element distribution can be obtained by means of in-lens reflection electron detector (EsB)
  • Features 4 The spatial resolution in EDX analysis is approx. 30 nm, smaller by two digits than the conventional spatial resolution.
  • Features 5 The new EBSP allows measurement at a space solution of 100 nm or less, greater than that of conventional machine, and at a high speed.

Basic Specifications

Electron gun Shcottoky-type FE electron gun
Accelerating voltage 100 V to 30 kV
Sample size, maximum φ 200 mm
Resolution 1.0 nm@15 kV
1.7 nm@1 kV
4.0 nm@100 V
Magnification 12X to 300,000X
Analysis function EDX: NSS300 from Thermo ELECTRON
EBSP: Hikari High Speed EBSD Detector by EDAX (TSL)
Field Case
Lamination film structure in electronic devices (identification of flaw)
Section observation and EDX analysis of wire bonding portion
Morphological observation of photoresist
Surface contamination of wafer
Observation of Pb-free mounted component
Observation of magnetic material/piezoelectric element and dielectric material/fluorescent material
Section observation of super lattice structure of compound semiconductor
Step observation of surface of compound semiconductor
Thin film/surface treatment Section observation of functional thin film (metal, semiconductor, inorganic material, polymer)
Observation of morphology/roughness of film surface
Observation of metallic thin film on polymer substrate
Section observation of surface treatment material: observation of film internal structure and fine structure of film/substrate interface
Observation/analysis of section of multilayer optical glass
EBSP measurement of crystalline orientation distribution in Cu plating
Observation of writing part of optical disc recording layer
EBSP of writing part of optical disc recording layer
Surface observation of DLC film
Metal/steel Observation of non-metallic precipitate and (composite) inclusion in metal/steel
Observation of intermetallic compound (submicron size or smaller)
Surface oxide distribution in steel material
Observation of dissimilar metal joining interface
Microscopic structure observation of fracture surface and sliding surface
EBSP measurement of residual austenitic phase distribution in steel material
Corrosion Section fine structure observation/EDX analysis of corrosion product in steel material
Observation of fine corrosion product (submicron size) in thin film surface
Observation of metal surface oxide
Ceramics Observation/analysis of different oxide crystalline particles (interface)
Roughness observation of ceramics surface in nm level
Morphological observation of ceramics fine particles (varying sizes from nm level to µm level)
Section observation of functional glass
Structure observation of concrete, slag and oxide potassium fertilizer
High polymer Surface observation of engineering plastics
Observation of additive for rubber
Carbon material Observation of CNT
Catalyst Morphological observation and element distribution of various catalysts (metal, oxide, etc.)
Paper making Observation of pulp and surface coating layer
Drug, living body, and others Observation of addition state of inorganics and organics

Observation Case 1: Observation of Organic Substance Attached on Si Wafer at Ultra-Low Accelerating Voltage

  • Observation of organic substance attached on Si wafer was conducted at an ultra-low accelerating voltage (100 V) without any deposition. It was found that the surface of the organic substance was not even and had many undulations. In addition, it was found that around the large organic substance at the center, small particles of approx. 100 nm in size existed on the whole plane.

    In a conventional SEM condition (15 kV), the surface shape is hardly seen. At 1 kV, shape observation is difficult due to charge up.

Observation Case 2: Observation of Aluminum Electrolytic Capacitor at Ultra-Low Accelerating Voltage

  • It is recognized that in an anodically oxidized aluminum electrolytic capacitor, alumina (dark contrast portion) is formed on the surface of metallic Al (bright contrast portion). High magnification observation reveals grow of alumina in a columnar crystal shape.

    This observation was also conducted without any deposition.
    Sample offered by: NEC

Observation Case 3: Observation of Commercially Available Optical Discs

  • Observation of commercially available DVD-RW having gone through laser writing was conducted. As the surface of the recording layer was observed by using in-lens SE detector with no processing, it was found that the contrast of the portions that had been irradiated with laser and turned into amorphous were different from the surrounding crystalline portions. From this difference in contrast, it is possible to identify the recorded portions.

Observation Case 4: Analysis of Wire Bonding Portion Using EDS

By decreasing the accelerating voltage while the electron beam diameter is small, the spatial resolution of EDS analysis has been decreased by one to two digits or more from conventional approx. 10 µm to approx. 30 nm, making it possible to analyze submicron area. In the section of a wire bonding portion as shown in the figure, Au and Al films as well as W thin film of approx. 100 nm in thickness are clearly analyzed. Also, Si and W, whose peaks overlaps with each other, can be separated by spectral mapping.

EDS analysis of Au wire bonding portion Accelerating voltage: 4 kV
EDS analysis of Au wire bonding portion
Accelerating voltage: 4 kV

Observation Case 5: Analysis of GaAs/AlAs Super Lattice Thin Film Using EDS

In an analysis case of GaAs/AlAs superlatice thin film section, 25 nm GaAs layer and AlAs layer could be separately analyzed.

Schematic picture of section of GaAs/AlAs super lattice thin film
Schematic picture of section of GaAs/AlAs super lattice thin film

Observation Case 6: Ultra-Low Accelerating Voltage SEM-EBSP Analysis: Crystalline Orientation Mapping on the Basis of Cu Plating Crystalline Particle

Due to combination with ultra-low accelerating voltage SEM, high resolution measurement by EBSP has been made possible.

Crystalline orientation mapping of Cu plating structure in submicron size has been obtained.

Observation of Cu plating crystalline particles Display mode: EBSP crystalline orientation mapping
Observation of Cu plating crystalline particles
Display mode: EBSP crystalline orientation mapping

Observation Case 7: Ultra-Low Accelerating Voltage SEM-EBSP Analysis: Distribution of Residual Austenitic Phase In Steel

  • Conventionally, EBSP analysis of residual austenitic phase (γ-Fe phase) in martensite was difficult because austenitic phase is small in size and there are many distortions in martensitic phase. Due to combination with ultra-low accelerating voltage SEM, the spatial resolution of EBSP measurement has been improved and therefore distribution of residual austenitic phase in micron size has been obtained.

Observation Case 8: Ultra-Low Accelerating Voltage SEM-EBSP Analysis: Analysis of Recording Part of Commercially Available DVD Recording Layer

Also in EBSP analysis of thin film of recording layer of commercially-available DVD (approx. 10 nm) in combination of ultra-low accelerating voltage SEM, the recorded part (amorphous phase) in submicron level and unrecorded part (crystalline phase) could be distinguished from each other.

Recorded part (amorphous phase) Unrecorded part (crystalline phase)
Recorded part (amorphous phase)
Unrecorded part (crystalline phase)

Observation of recording layer of commercially available DVD
Display mode: image quality image, accelerating voltage: 8 kV

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